Growth of Nanostructured Silicon by Low Pressure Chemical Vapor Deposition (LPCVD)

Growth Equipment

LPCVD system is used for the growth of silicon nanowires and silicon nanotubes. In this process, at a certain temperature and pressure and in the presence of the reactive gases, through the vapor-liquid-solid (VLS) method the nanostructured silicon is synthesized using a gold thin film as a catalyst. Relying on developed technological processes by INEC researchers, the creation of silicon nanowires, silicon nanotubes and Bilayer nanotubes, nanowires with specified kinks, hexagonal structures, etc., will be practicable. The device maximum working temperature and minimum pressure are 850 °C and 0.001 Torr, respectively; and the input gases are silane, hydrogen, ammonia, argon and nitrogen. Gas flow, pressure and temperature are controllable in this system.




  • Growth of Silicon Nanowires

    Unit Each Run Amount : 5,000,000 Rls.
  • Growth of Silicon Nanotubes

    Unit Each Run Amount : 5,500,000 Rls.